Nexperia has expanded its portfolio of application-specific MOSFETs (ASFETs) with features that meet specific application requirements. The new 80-V PSMN1R9-80SSJ and 100-V PSMN2R3-100SSJ MOSFETs have ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature to be a superior material to silicon (Si) in many properties for the ...
WASHINGTON, D.C., Oct. 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide ...
Electrification of transportation isn’t relegated to just passenger cars and commercial trucks—two- and three-wheelers and 3-wheelers are firmly in the midst of this transformation. As a result, the ...
Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL, ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and ...
Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that ...
Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...
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