Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

New 40V devices offer enhanced noise immunity and design flexibility STMicroelectronics has introduced 40V STripFET F8 ...

€345k Vinnova grant will help company further develop Atomic Layer Etch Pitch Splitting technology AlixLabs AB, a Swedish ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, has opened its North American ...

Wolfspeed has announced that Gregg Lowe, who has led the company's transition to a pure-play SiC company, will depart this month from his roles as president and CEO and as a member of the board. In ...

At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC substrate.

This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters Toshiba ...

Trench technology reduces power loss by about 50 percent compared to conventional planar SiC-MOSFETs Mitsubishi Electric will ...